Transistor Oscillator and Amplifier Grids

نویسندگان

  • ROBERT M. WEIKLE
  • MOONIL KIM
  • DAVID B. RUTLEDGE
چکیده

In this paper, we review recent developments in quasi-optical power combining. In particular, we examine planar periodic grids and their use as quasi-optical active components. A variely of grids used for the generation and amplification of electromagnetic radiation have been investigated. Although quasi-optical techniques are applicable to a large variery of solid-state devices, special attention is given to transistors. Transistors are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. In addition, we discuss a MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output. An advantage of these planar grids is they can be scaled for operation at millimeterand submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Single Transistor Crystal Oscillator Circuits

Understanding a simple crystal oscillator transmitter circuit The transistor in common emitter configuration contributes -180 deg phase shift between base. Write short notes on (i) RC Oscillator (ii) Wien bridge Oscillator (iii) Crystal It consists of a conventional single transistor amplifier and a RC phase shift network. The wien-bridge oscillator is the standard oscillator circuit for all fr...

متن کامل

Planar MESFET Grid Oscillators Using Gate Feedback

A new method for quasi-optically combining the output power of MESFET's is presented in which drain and source leads couple directly to the radiated field. The design consists of a planar grid of devices placed in a Fabry-Perot cavity. Capacitive feedback is provided to the gate. This is in contrast to previous MESFET grid designs where the radiated electric field was coupled to the drain and g...

متن کامل

A W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

متن کامل

A Modified Noise Analysis of a Common Source ̶ Common Gate Low Noise Transconductance Amplifier for Sub-micron Technologies

This paper is based on analysis of a common source - common gate low noise transconductance amplifier (CS-CG LNTA). Conventional noise analyses equations are modified by considering to the low output impedance of the sub-micron transistors and also, parasitic gate-source capacitance. The calculated equations are more accurate than calculated equations in other works. Also, analyses show that th...

متن کامل

A low-power fully integrated Gaussian-MSK modulator based on the sigma-delta fractional-N frequency synthesis

A fully integrated GMSK modulator in DRRS band is presented. All components of the transmitter except the power amplifier, including the loop filter and the oscillator are on-chip. Transistor and system level simulations demonstrate that the modulator meets the performance requirements of the DRRS standard. The circuit power consumption of the modulator at 1.4GHz is 37mW with a single 3V power ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004